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ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-source voltage
Gate source voltage
SYMBOL
V DSS
V GS
LIMIT
250
± 40
UNIT
V
V
Continuous drain current
(V GS =10V; TA=25°C) (a)
(V GS =10V; TA=70°C) (a)
I D
I D
-265
-212
mA
mA
Pulsed drain current (c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T A =25°C (a)
Linear derating factor
Operating and storage temperature range
I DM
I S
I SM
P D
T j : T stg
-1
-0.75
-1
2
16
-55 to +150
A
A
A
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
Junction to ambient
(a)
(b)
R θ JA
R θ JA
63
26
°C/W
°C/W
NOTES :
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High voltage applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 4 - JUNE 2004
SEMICONDUCTORS
2
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